Kopin’s GaN (Gallium Nitride) high-electron mobility transistors (HEMTs) are intended for use in the next generation of military, public mobile radio, WiMAX and WCDMA base station products. Kopin has been enhancing the performance, reliability, and manufacturability of GaN transistor structures by capitalizing on techniques in epitaxial growth of GaN materials and volume manufacturing of III-V materials. Kopin's GaN-based HEMT wafers exhibit excellent device characteristics with a high degree of thickness and compositional uniformity. The GaN transistor efforts have focused on using silicon carbide substrates, although efforts have also been extended to other starting materials, including sapphire.