NH-MicroMetrics’ non-magnetic metal-electrode-leadless-faced- (MELF-) packaged PIN Diodes feature high power handling and low distortion. The diodes are designed for switching and attenuator applications from HF through UHF frequencies. They are manufactured using a glassing process which features full-face bonding on the anode and cathode of the device to ensure full surface contact of the square ceramic package. This creates lower electrical and thermal resistance and provides higher average performance at RF power levels up to 100 W CW.

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They also feature low series resistance, which leads to low inductance characteristics, and low junction capacitance, which delivers high isolation. The product family has resistance specification at 100 MHz from 0.3 W to 1.0 W at 100 mA, and capacitance specifications at 1 MHz of 0.5 pF to 2.0 pF at 100 V.

Lifetime specifications are from 1.0 µs to 8.00 µs. This allows for lower intermod distortion and higher average incident power handling capability. The electrical and mechanical specifications of these devices meet the requirements of MRI systems.

Package types available include the new surface mount ceramic package CS127-1 and standard MELF CS127-4. These devices can also be delivered in chip form or in custom specified packages.