RF power transistor supplier Nitronex has developed a 28 V, 100 W gallium nitride (GaN) high-electron mobility transistor (HEMT) for WiMAX applications. Designed using its patented SIGANTICNRF1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3 GHz to 2.7 GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64-QAM ¾, 8 burst, 3.5 MHz channel bandwidth, 10.3 dB PAR at 0.01% probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5 dB of gain (typical), 21% efficiency, and less than 2.5% EVM - all at >10 W of power.

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The NPT25100 is packaged in a thermally enhanced copper moly copper package that will be offered in both bolt-down and pill versions, according to Nitronex. Samples and application boards will be available starting in June, and full production qualification is expected in July. The 1000 piece suggested price for the NPT25100 is $90. The NPT25100 is lead-free and RoHS-compliant.