TriQuint Semiconductor has introduced two new high-OTOI (output third-order intercept) gallium arsenide (GaAs) amplifiers at this week’s European Microwave Week Exhibition (Sept. 12-14) in Manchester, UK. These new advanced design amplifiers are part of TriQuint's continuing commitment to meet customers' market-specific high-frequency signal amplification needs while also providing smaller, lower-cost alternatives compared to previous-generation products.

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The new amplifiers, TGA4530 and TGA4530-SM, are designed for point-to-point radio, K-band satellite communications and point-to-multipoint network infrastructure applications. They offer designers high OTOI performance (for higher data rates, improved system efficiency and longer range transmission) in both MMIC form and in low-cost, industry-standard plastic surface-mount packages. Additional product benefits include an on-chip power detector to reduce the bill of materials and a protective surface passivation layer for environmental robustness.

While TGA4530 offers a frequency coverage of 17 GHz-21 GHz, it provides 42 dBm OTOI, 30 dBm output power at the 1 dB compression point at a bias of 7 V (825 mA, Idq). Plus, it provides a typical gain of 20 dB with input and output return losses of 15 dB. The small size of the MMIC is achieved using TriQuint's proven 0.25-micron power pHEMT 3MI (3-metal-layer interconnect) production process. The TGA4530 also incorporates an on-chip power detector, thus reducing the bill of materials by eliminating the need for a discrete power detection circuit. The TGA4530 is the MMIC version; the TGA4530-SM is packaged.

Evaluation boards are available on request; and the high power amplifiers are lead-free and RoHS-compliant.